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Description

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a combination of the analytical technique for surface secondary ion mass spectrometry (SIMS) with a time-of-flight mass analyzer (ToF).

ToF-SIMS is a surface-sensitive analytical technique that can provide elemental and molecular information about the outermost atomic layers (typically top 1-2 nm) of a sample.

The IONTOF TOF.SIMS 5 is capable of producing high mass resolution spectra (M/â–³M ~ 6000-10000), high spatial resolution images (~100 nm), and depth profiling of flat, multilayer samples with high-depth resolution. 2D imaging and depth profiling experiments can be coupled to produce 3-dimensional images of changes in chemistry below the surface of a material.

• Surface chemical analysis (<2 nm) in either positive or negative polarity for all metal and non-metal elemental, isotopic and molecular analytes at high mass resolution. Surface chemical imaging, potentially down to 100 nm resolution.
• Detection of all elements
• Isotope sensitivity
• Chemical information via molécules, fragments, clusters
• Small information depth (<2 nm)
• High depth resolution (down to 5 nm resolution)
• high lateral resolution (down to 100 nm resolution)
• low detection limit (ppm - ppb)
• The preferred sample dimensions for our ToF-SIMS instrument are length/width ~11mm and height of 1mm (maximum height 5mm).